HTSEMI 2SA1036

2SA1 036
TRANSISTOR(PNP)
SOT-23
FEATURES
∙ Large IC. ICMax.= -500 mA
∙ Low VCE(sat). Ideal for low-voltage operation.
1. BASE
2. EMITTER
3. COLLECTOR
MARKING : HP, HQ, HR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-32
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-1
μA
DC current gain
hFE
VCE=-3V,IC=-10mA
Collector-emitter saturation voltage
fT
Transition frequency
Collector output capacitance
CLASSIFICATION OF
Rank
Range
VCE(sat)
Cob
82
390
IC=-100mA,IB=-10mA
-0.4
VCE=-5V,IC=-20mA,f=100MHz
VCB=-10V,IE=0,f=1MHz
200
MHz
7
pF
hFE
P
Q
R
82 - 180
120 - 270
180 - 390
1 JinYu
semiconductor
V
www.htsemi.com
Date:2011/05
2SA1 0 3 6
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05