2SB1 1 8 9 TRANSISTOR(PNP) FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 μA DC current gain hFE VCE=-3V,IC=-100mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking 82 390 IC=-500mA,IB=-50mA VCE=-10V,IC=-50mA,f=100MHz -0.4 100 MHz VCB=-10V,IE=0,f=1MHz 20 hFE P Q R 82-180 120-270 180-390 BDP BDQ BDR １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ pF 2SB1 1 8 9 Typical Characteristics 2SB1189 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５