2SC1766 SOT-89-3L TRANSISTOR(NPN) FEATURES z Small Flat Package z High Speed Switching Time z Low Collector-emitter saturation voltage 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1) VCE=2V, IC=0.5A 70 hFE(2)* VCE=2V, IC=2A 20 Collector-emitter saturation voltage VCE(sat) IC=1A,IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A,IB=50mA 1.2 V DC current gain fT Transition frequency VCE=2V,IC=0.5A,f=100MHz 120 CLASSIFICATION OF hFE(1) RANK P Q Y RANGE 82–180 120–270 180–390 MARKING P1766 Q1766 Y1766 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １ JinYu semiconductor www.htsemi.com 240 MHz