2SC2712 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURE · Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 60 V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain hFE VCE=6V, IC=2mA Collector-emitter saturation voltage VCE(sat) fT Transition frequency Output capacitance Cob Noise Figure NF 70 IC= 100mA, IB=10mA VCE=10V, IC= 1mA 700 0.1 0.25 80 VCB=10V, IE=0,f=1 MHz VCE=6V,IC=0.1mA,f=1kHz, Rg=10kΩ MHz 2.0 3.5 pF 1.0 10 dB CLASSIFICATION OF hFE Rank Range Marking O Y GR BL 70-140 120-240 200-400 350-700 LO LY LG LL １ JinYu semiconductor www.htsemi.com V 2SC2712 ２ JinYu semiconductor www.htsemi.com 2SC2712 ３ JinYu semiconductor www.htsemi.com