2SC2873 SOT- 89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS 2. COLLECTOR 3. EMITTER Power Amplifier and Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1) VCE=2V, IC=0.5A 70 20 DC current gain 240 hFE(2) VCE=2V, IC=2A Collector-emitter saturation voltage VCE(sat) IC=1A,IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A,IB=50mA 1.2 V fT VCE=2V,IC=0.5A 120 MHz VCB=10V, IE=0, f=1MHz 30 pF Transition frequency Cob Collector output capacitance CLASSIFICATION OF hFE(1) RANK O Y RANGE 70–140 120–240 MARKING MO MY １ JinYu semiconductor www.htsemi.com