2SC 3437 TRANSISTOR (NPN) SOT–23 FEATURES High Transition Frequency Low Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V 3. COLLECTOR IC Collector Current 200 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=10mA 40 hFE(2) VCE=1V, IC=100mA 20 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=1mA Base-emitter saturation voltage VBE(sat) IC=20mA, IB=1mA fT VCE=10V,IC=10mA DC current gain Transition frequency Collector output capacitance Cob conditions Min Typ Max 240 0.3 1 200 6 CLASSIFICATION OF hFE(1) RANK R O Y RANGE 40–80 70–140 120–240 MARKING CHR CHO CHY JinYu semiconductor www.htsemi.com V V MHz VCB=10V, IE=0, f=1MHz １ Unit pF