2SC4102 TRANSISTOR (NPN) FEATURES SOT–323 High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V 1. BASE VCEO Collector-Emitter Voltage 120 V 2. EMITTER VEBO Emitter-Base Voltage 5 V 3. COLLECTOR IC Collector Current 50 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50µA, IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=50µA, IC=0 5 V Collector cut-off current ICBO VCB=100V, IE=0 500 nA Emitter cut-off current IEBO VEB=4V, IC=0 500 nA DC current gain hFE VCE=6V, IC=2mA Collector-emitter saturation voltage VCE(sat) fT Transition frequency Collector output capacitance Cob 0.5 V VCE=12V,Ic=2mA ,f=100MHz 140 MHz VCB=12V, IE=0, f=1MHz 2.5 pF RANK R S RANGE 180–390 270–560 MARKING TR TS １ JinYu 560 IC=10mA, IB=1mA CLASSIFICATION OF hFE semiconductor 180 www.htsemi.com