2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation and Current z Mini Power Type Package 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V IC Collector Current 5 A PC Collector Power Dissipation 750 mW Thermal Resistance From Junction To Ambient 167 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 7 V Collector cut-off current ICBO VCB=10V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 µA hFE(1) VCE=2V, IC=1mA hFE(2) VCE=2V, IC=500mA 230 hFE(3) VCE=2V, IC=2A 150 VCE(sat) IC=3A,IB=0.1A DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance fT 200 800 1 VCE=6V,IC=50mA，f=200MHz 150 VCB=20V, IE=0, f=1MHz Cob 50 CLASSIFICATION OF hFE（2） RANK Q R S RANGE 230–380 340–600 560–800 １ JinYu semiconductor www.htsemi.com V MHz pF