A105 1 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100 u A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 uA Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 uA Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 uA VCE=-6V, IC= -2mA hFE DC current gain 130 400 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V fT Transition frequency CLASSIFICATION Rank Range OF VCE=-10V, IC= -1mA f=30MHz 80 MHz hFE L H 130-200 200-400 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ A105 1 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５