A92 SOT-89-3L TRANSISTOR (PNP) FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 1. BASE 2. COLLECTOR 3. EMITTER MARKING: A92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -310 V VCEO Collector-Emitter Voltage -305 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -310 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -305 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V ICBO VCB=-200V,IE=0 -0.25 µA VCE=-200V,IB=0 -0.25 µA VCE=-300V,IB=0 -5 µA -0.1 µA Collector cut-off current Emitter cut-off current DC current gain ICEO IEBO VEB=-5V,IC=0 hFE(1) VCE=-10V, IC=-1mA 60 hFE(2) VCE=-10V, IC=-10mA 100 hFE(3) VCE=-10V, IC=-80mA 60 300 Collector-emitter saturation voltage VCE(sat) IC=-20mA,IB=-2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC=-20mA,IB=-2mA -0.9 V Transition frequency fT VCE=-20V,IC=-10mA,f=30MHz 50 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５