BC808 TRANSISTOR (PNP) SOT-23 FEATURES z Suitable for AF-Driver stages and low power output stages Complement to BC818 z 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.8 A PC* Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-25V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-100mA 100 hFE(2) VCE=-1V, IC=-300mA 60 630 DC current gain VCE(sat) Collector-emitter saturation voltage Base-emitter voltage VBE Transition frequency fT Cob Collector output capacitance CLASSIFICATION OF Rank Range hFE(1) Marking IC=-500mA, IB=-50mA -0.7 V VCE=-1V, IC=-300mA -1.2 V VCE=-5V, IC=-10mA, f=50MHz VCB=-10V, IE=0, f=1MHz 100 MHz 12 pF hFE 16 25 40 100-250 160-400 250-630 5E 5F 5G １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC808 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC808 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５