BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Value Collector-Base Voltage BC856 BC857 BC858 -50 Units 3. COLLECTOR V -30 Collector-Emitter Voltage BC856 BC857 BC858 VEBO -80 2. EMITTER Emitter-Base Voltage -65 -45 V -30 -5 V IC Collector Current –Continuous -0.1 A PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ DEVICE MARKING BC856A=3A; BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC856A,B BC857A, B,C BC858A, B,C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage conditions VCBO IC= -10μA, IE=0 -30 BC856 -65 VCEO IC= -10mA, IB=0 VEBO Collector cut-off current ICBO VCB= -45 V , IE=0 BC856 VCE= -60 V , IB=0 ICEO VCE= -40 V , IB=0 VEB= -5 V , IC=0 BC856A, 857A,858A BC856B, 857B,858B V V -0.1 μA -0.1 μA -0.1 μA VCE= -25 V , IB=0 IEBO Emitter cut-off current -45 -5 VCB= -25 V , IE=0 BC858 DC current gain IE= -1μA, IC=0 BC858 BC857 V VCB= -70 V , IE=0 BC856 BC857 UNIT -30 BC858 Emitter-base breakdown voltage MAX -50 BC858 BC857 Collector cut-off current MIN -80 BC856 BC857 Collector-emitter breakdown voltage Test hFE VCE= -5V, IC= -2mA BC857C,BC858C 125 250 220 475 420 800 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -5mA -1.1 V Transition frequency fT Collector capacitance Cob VCE= -5 V, IC= -10mA f=100MHz VCB=-10V, f=1MHz 100 MHz 4.5 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF BC856A,B BC857A, B,C BC858A, B,C Typical Characteristics ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC856A,B BC857A, B,C BC858A, B,C ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC856 5 8 7 5 8 8 ５ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５