BCX7 0J,K TRANSISTOR (NPN) SOT-23 FEATURES Low current z Low voltage z 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BCX70J：AJ, BCX70K:AK MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA PC Collector Power Dissipation 250 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 45 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1μA,IC=0 5 V Collector cut-off current DC current gain DC current gain BCX70J BCX70K Collector-emitter saturation voltage Base -emitter saturation voltage ICES VCE=45V,VBE=0 hFE1 VCE=5V,IC=10μA 30 hFE2 VCE=5V,IC=2mA 250 hFE3 VCE=1V,IC=50mA 90 hFE1 VCE=5V,IC=10μA 100 hFE2 VCE=5V,IC=2mA 380 hFE3 VCE=1V,IC=50mA 100 VCE(sat)1 IC= 10mA IB= 0.25 mA 0.05 0.35 V VCE(sat)2 IC= 50mA IB=1.25 mA 0.1 0.55 V VBE(sat)1 IC= 10mA IB=-0.25 mA 0.6 0.85 V VBE(sat)2 IC= 50mA IB= 1.25 mA 0.7 1.05 V 0.55 0.75 V Base-emitter voltage VBE VCE=5V,IC=2mA Collector output capacitance Cob VCB=10V,IE=0,f=1MHz Noise Figure NF Gain-Bandwidth Product fT JinYu 630 1.7 www.htsemi.com pF 6 f=1KHz,BW=200Hz,RS=2KΩ VCE= 5 V, IC=10mA,f =100 MHz 100 nA 460 VCE=5V,IC=200μA, １ semiconductor 20 250 dB MHz BCX7 0J,K Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BCX7 0J,K ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５