DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES · Built-in bias resistors enable the configuration of an inverter circuit without connecting ex temal input resistors. · The bias resistors conisit of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely Eliminating parasitic effects. · Only the on/off conditions need to be set for operation, marking device design easy. PIN CONNENCTIONS AND MARKING DTA114TE DTA114TUA (1) Base (2) Emitter (3) Collector SOT-523 Addreviated symbol: 94 DTA114TKA SOT-323 Addreviated symbol: 94 DTA114TCA DTA114ECA (1) Base (2) Emitter (3) Collector SOT-23-3L SOT-23 Addreviated symbol: 94 Addreviated symbol: 94 DTA114TSA TO-92S １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol LIMITS(DTA114T□) Parameter E UA KA Units CA SA VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Dissipation TJ, Tstg Junction and Storage Temperature 150 Symbol 300 mW ℃ -55~+150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter 200 unless Test otherwise conditions specified) MIN TYP MAX UNIT V(BR)CBO Ic=-50µA,IE=0 -50 V V(BR)CEO Ic=-1mA,IB=0 -50 V V(BR)EBO IE=-50µA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 uA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 uA DC current gain hFE VCE=-5V,IC=-1mA VCE(sat) IC=-10mA,IB=-1mA Transition frequency fT VCE=-10V,IC=-5mA, f=100MHz Imput resistor R1 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage 100 250 600 -0.3 250 7 10 MHz 13 Typical Characteristics ２ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ kΩ