DTA143 TM/DTA143 TE/DTA143 TUA DTA143 TKA/DTA143 TSA/DTA143 TCA DIGITAL TRANSISTOR (PNP) Equivalent circuit FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external inputresistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost completely eliminating parasitic effects. 3. Only the on/off conditions need to be set for operation, making device design easy. PIN CONNENCTIONS AND MARKING DTA143TE SOT-523 DTA143TUA Addreviated symbol: 93 DTA143TKA SOT-23-3L SOT-323 Addreviated symbol: 93 DTA143TCA DTA114ECA SOT-23 Addreviated symbol: 93 Addreviated symbol: 93 DTA143TM DTA114ECA DTA143TSA SOT-723 Addreviated symbol: 93 TO-92S １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ DTA143 TM/DTA143 TE/DTA143 TUA DTA143 TKA/DTA143 TSA/DTA143 TCA Absolute maximum ratings(Ta=25℃) Parameter Limits (DTA143T□ ) Symbol M E UA CA KA SA Unit V(BR)CBO -50 V Collector-emitter voltage V(BR)CEO -50 V Emitter-base V(BR)EBO -5 V Collector current IC -100 mA Collector Power dissipation PC Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Collector-base voltage voltage 100 150 200 300 mW Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO -50 V Ic=-50µA Collector-emitter breakdown voltage V(BR)CEO -50 V Ic=-1mA Emitter-base breakdown voltage V(BR)EBO -5 V IE=-50µA Collector cut-off current ICBO -0.5 µA VCB=-50V Emitter cut-off current IEBO -0.5 µA VEB=-4V VCE(sat) -0.3 V IC=-5mA,IB=-0.25mA Collector-emitter saturation voltage DC current transfer ratio hFE 100 Input resistance R1 3.29 Transition frequency fT 600 4.7 250 6.11 VCE=-5V,IC=-1mA KΩ MHz VCE=-10V ,IE=5mA,f=100MHz Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５