FMMT4124 TRANSISTOR (NPN) SOT–23 FEATURES Switching Application MARKING:ZC 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 330 mW Thermal Resistance From Junction To Ambient 378 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 conditions Min 30 Typ Max Unit V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 50 nA Emitter cut-off current IEBO VEB=3V, IC=0 50 nA hFE(1) * VCE=1V, IC=2mA 120 hFE(2) * VCE=1V, IC=50mA 60 Collector-emitter saturation voltage VCE(sat)* IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat)* IC=50mA, IB=5mA 0.95 V DC current gain Transition frequency fT VCE=20V,IC=10mA, f=100MHz 360 300 MHz Collector output capacitance Cob VCB=5V, IE=0, f=140KHz 4 pF Emitter input capacitance CIb VBE=0.5V, IE=0, f=140KHz 8 pF *Pulse test １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５