KTA1666 TRANSISTOR (PNP) SOT-89-3L FEATURES z Complementary to KTC4379 z Small Flat Package z Low Saturation Voltage z Power Amplifier and Switching Application 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE(1)* VCE=-2V, IC=-500mA 70 hFE(2)* VCE=-2V, IC=-1.5A 40 240 Collector-emitter saturation voltage VCE(sat)* IC=-1A,IB=-50mA -0.5 V Base-emitter saturation voltage VBE(sat)* IC=-1A,IB=-50mA -1.2 V 40 pF Cob Collector output capacitance fT Transition frequency VCB=-10V,IE=0, f=1MHz VCE=-2V,IC= -500mA 120 MHz *Pulse test: pulse width ≤300mS, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK O Y RANGE 70–140 120–240 MARKING WO WY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５