KTC3205 TRANSISTOR (NPN) TO-92L 1. EMITTER FEATURES 2. COLLECTOR Complementary to KTA1273 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol 123 unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1mA , IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V Collector cut-off current ICBO VCB= 30V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA DC current gain hFE VCE= 2 V, IC= 500 mA VCE (sat) IC= 1.5A, IB= 30 mA 2.0 V Base-emitter voltage VBE VCE=2V, IC= 500mA 1.0 V Transition frequency fT VCE= 2 V, IC= 500mA 120 MHz Cob VCB=10V, IE=0,f=1MHZ 13 pF Collector-emitter saturation voltage Collector Output Capacitance 100 320 CLASSIFICATION OF hFE Rank O Y Range 100-200 160-320 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC3205 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５