KTC3265 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE z z 2. EMITTER High DC current gain Complementary to KTA1298 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=30 V, IE=0 0.1 μA Collector cut-off current IEBO VEB=5 V, IC=0 0.1 μA DC current gain hFE VCE=1V, IC= 100mA VCE(sat) IC=500mA, IB=20mA Collector-emitter saturation voltage base-emitter voltage V BE Transition frequency fT Collector output capacitance CLASSIFICATION OF Rank Range Marking VCE=1V,IC=10mA VCE=5V, IC=10mA f=100MHz Cob VCB=10V,IE=0,f=1MHZ 100 320 0.5 0.5 V 0.8 V 120 MHz 13 pF hFE O Y 100-200 160-320 EO EY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC3265 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５