M8050 TRANSISTOR(NPN) SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 μA Collector cut-off ICEO VCE= 20V, IB=0 0.1 μA hFE(1) VCE=1V, IC=5mA 45 hFE(2) VCE=1V, IC=100mA 80 hFE（3） VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V current DC current gain fT Transition frequency VCE=6V, IC= 20mA , f=30MHz 300 150 MHz * Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%. CLASSIFICATION OF Rank Range hFE(2) L H 80-200 200-300 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ M8050 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５