MMBTA94 TRANSISTOR(PNP) SOT–23 FEATURES High Breakdown Voltage MARKING:4D 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation 350 mW Thermal Resistance From Junction To Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -400 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -400 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-400V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-400V, IB=0 -5 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 µA hFE(1) VCE=-10V, IC=-10mA 80 hFE(2) VCE=-10V, IC=-1mA 70 hFE(3) VCE=-10V, IC=-100mA 40 hFE(4) VCE=-10V, IC=-50mA 40 VCE(sat)1 IC=-10mA, IB=-1mA -0.2 V VCE(sat)2 IC=-50mA, IB=-5mA -0.3 V VBE(sat) IC=-10mA, IB=-1mA -0.75 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT VCE=-20V,IC=-10mA, f=30MHz 300 50 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５