MMBTA92 TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING:2D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units VCBO Symbol Collector-Base Voltage Parameter -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -300 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, junction to Ambient 410 ℃/mW ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE(1) VCE= -10V, IC= -1mA 60 hFE(2) VCE= -10V, IC=-10mA 100 hFE(3) VCE= -10V, IC=-30mA 60 Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 V DC current gain Transition frequency fT VCE=-20V, IC= -10mA f=30MHz 50 200 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA92 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５