MMBTH1 0 TRANSISTOR(NPN) SOT–23 FEATURES VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 3 V IC Collector Current 50 mA PC Collector Power Dissipation 225 mW Thermal Resistance From Junction To Ambient 556 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 3 V Collector cut-off current ICBO VCB=25V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=2V, IC=0 0.1 µA DC current gain hFE VCE=10V, IC=4mA VCE(sat) IC=4mA, IB=0.4mA 0.5 V Base-emitter voltage VBE VCE=10V, IC=4mA 0.95 V Transition frequency fT Collector-emitter saturation voltage Collector output capacitance Cob VCE=10V,IC=4mA f=100MHz VCB=10V, IE=0, f=1MHz 60 650 MHz 0.7 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF