PT8822 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), [email protected], Ids@2A = 50mΩ RDS(ON), [email protected], [email protected] = 32mΩ RDS(ON), [email protected], [email protected] = 24mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for Li ion battery pack applications Package Dimensions D1 S1 S1 G1 1 8 2 7 3 6 4 5 D2 S2 S2 G2 REF. Millimeter Min. Max. Millimeter REF. Min. Max. A 1.10 MAX. L 0.45 REF. A1 0 0.10 L1 0.60 REF. A2 0.70 1.00 θ b D 0.12 REF. 2.70 3.10 e 0.95 REF. E 2.60 3.00 e1 1.90 REF. E1 1.40 1.80 c 0° 0.30 10° 0.50 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 ID 7 IDM 25 Continuous Drain Current Pulsed Drain Current o TA = 25 C Maximum Power Dissipation o TA = 75 C PD TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA Unit V A 2 W 1.2 o -55 to 150 62.5 o C C/W １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PT8822 20V Dual N-Channel Enhancement Mode MOSFET Parameter Symbol Test Condition Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA Drain-Source On-State Resistance RDS(on) VGS = 1.8V, ID = 2A 36.0 50.0 Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 5.5A 25.0 32.0 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 6.6A 19.0 24.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V Gate Body Leakage IGSS VGS = ± 12V, VDS = 0V Forward Transconductance gfs VDS = 5V, ID = 7A 20 V 0.4 mΩ 1 V 1 uA ±100 nA 17.7 S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, ID = 7A VGS = 4.5V VDD = 10V, ID = 1A, VGEN = 4.5V RG = 6Ω 8.19 10 nC 1 1.93 10.87 6.03 ns 28.07 4.33 VDS = 10V, VGS = 0V f = 1.0 MHz 836.88 pF 126.53 92.78 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 1A, VGS = 0V 2.5 A 1.2 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PT8822 20V Dual N-Channel Enhancement Mode MOSFET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. RDSON v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５