PXT2222A TRANSISTOR (NPN) SOT-89 FEATURES Epitaxial planar die construction z Complementary PNP Type available(PXT2907A) z 1. BASE 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. EMITTER Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO IC Emitter-Base Voltage Collector Current -Continuous 6 600 V mA PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 +150 3 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10μ A,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0. 01 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0. 01 μA hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 hFE(5) VCE=1V, 50 hFE(6) VCE=10V, IC= 500mA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IC= 150mA 300 40 VCE(sat) IC=500mA, IB= 50mA 1 V VCE(sat) IC=150mA, IB=15mA 0.3 V VBE(sat) IC=500mA, IB=50mA 2.0 V VBE(sat) IC=150mA, IB=15mA 0.6 1.2 V VCE=10V, IC=20mA f=100MHz 300 MHz Transition frequency fT Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF Delay time td 10 nS Rise time tr VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA 25 nS Storage time tS 225 nS Fall time tf 60 nS VCC=30V, IC=150mA IB1=- IB2= 15mA １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PXT2222A Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５