PXT2907A TRANSISTOR(PNP) SOT-89-3L FEATURES z Switching and Linear Amplification z High Current and Low Voltage z Complement to PXT2222A 1. BASE 2. COLLECTOR 3. EMITTER MARKING:p2F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.01 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.01 µA DC current gain hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Delay time td Rise time tr Storage time ts Fall time tf Transition frequency fT VCE=-10V, IC=-0.1mA 75 VCE=-10V, IC=-1mA 100 VCE=-10V, IC=-10mA 100 VCE=-10V, IC=-150mA 100 VCE=-10V, IC=-500mA 50 300 IC=-500mA,IB=-50mA -1.6 V IC=-150mA,IB=-15mA -0.4 V IC=-500mA,IB=-50mA -2.6 V IC=-150mA,IB=-15mA -1.3 V 12 ns 30 ns 300 ns 65 ns VCC=-30V, IC=-150mA, IB1=- IB2=-15mA VCE=-10V,IC=-20mA, f=100MHz 200 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５