HTSEMI S9013

S901 3
TRANSISTOR(NPN)
SOT-23
FEATURES
z
Complementary to S9012
z
Excellent hFE linearity
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: J3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
500
mA
PC
Collector Power Dissipation
300
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=20V, IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC= 50mA
120
hFE(2)
VCE=1V, IC=500mA
40
400
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB= 50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB= 50mA
1.2
V
fT
Transition frequency
CLASSIFICATION OF
Rank
Range
VCE=6V,
f=30MHz
hFE(1)
L
120-200
IC= 20mA
150
MHz
H
J
200-350
300-400
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
S901 3
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
A,Apr,2011