SI2312 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), [email protected], [email protected] < 31mΩ RDS(ON), [email protected], [email protected] < 37mΩ RDS(ON), [email protected], [email protected] < 85mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G A B C D E Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 F 0.45 REF. S G H K J L Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 M 0° REF. 0.55 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS +8 ID 4.9 IDM 15 Continuous Drain Current Pulsed Drain Current TA = 25oC Maximum Power Dissipation o PD TA = 75 C TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA Unit V A 0.75 W 0.48 o -55 to 150 140 o C C/W １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ SI2312 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Symbol Test Cond ition Min. Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 20 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 5.0A 21.0 31.0 Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 4.5A 24.0 37.0 Drain-Source On-State Resistance RDS(on) VGS = 1.8V, ID = 4.0A 50.0 85.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA Zero Gate Voltage Drain Current IDSS Gate Body Leakage Parameter Typ. Miax. Unit Static Forward Transconductance V 0.4 mΩ 1 V VDS = 20V, VGS = 0V 1 uA IGSS VGS = ± 8V, VDS = 0V ± 100 nA gfs VDS = 15V, ID = 5.0A S 40 Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time Turn-Off Delay Time tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, ID = 5.0A VGS = 4.5V VDD = 10V, RL=10Ω ID = 1A, VGEN = 4.5V RG = 6Ω VDS = 8V, VGS = 0V f = 1.0 MHz 11.2 14 nC 1.4 2.2 15 25 40 60 48 70 31 45 ns 500 pF 300 140 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 1.8A, VGS = 0V 1.7 A 1.2 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ SI2312 20V N-Channel Enhancement Mode MOSFET ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５