UMD5N General purpose transistors (dual digital transistors) FEATURES z Both the DTA143X chip and DTC144E chip in a package z Mounting possible with SOT-363 automatic mounting machines z Transistor elements are independent, eliminating interference z Mounting cost and area be cut in half SOT-363 1 Marking: D5 Equivalent circuit DTr1 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~+40 V Output current IO 30 IC(MAX) 100 Pd 150 mW Power dissipation mA Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Input current Output current Symbol Min. VI(on) 3 Unit V Conditions VCC=5V ,IO=100μA VO=0.3V ,IO=2mA VO(on) 0.3 V II 0.18 mA VI=5V IO(off) 0.5 μA VCC=50V, VI=0 68 Input resistance R1 32.9 Resistance ratio R2/R1 0.8 Transition frequency Max. 0.5 GI DC current gain Typ VI(off) IO/II=10mA/0.5mA VO=5V ,IO=5mA 61.1 1 fT KΩ 1.2 250 MHz VO=10V ,IO=5mA,f=100MHz DTr2 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC -50 V Input voltage VIN -20~+7 V Output current Power dissipation IO -100 IC(MAX) -100 Pd 150 mW mA Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 UMD5N Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Input current Output current Symbol Min. VI(off) VI(on) -0.3 Unit V Conditions VCC=-5V ,IO=-100μA VO=-0.3V ,IO=-20mA VO(on) -0.3 V II -1.8 mA VI=-5V -0.5 μA VCC=-50V, VI=0 IO(off) 30 Input resistance R1 3.29 Resistance ratio R2/R1 1.7 Transition frequency Max. -2.5 GI DC current gain Typ fT IO/II=-10mA/-0.5mA VO=-5V ,IO=-10mA 6.11 KΩ 2.6 250 MHz VO=-10V ,IO=-5mA,f=100MHz 2 JinYu semiconductor www.htsemi.com Date:2011/ 05