HTSEMI ZMM8V2

ZMM 1...ZMM200
SILICON PLANAR ZENER DIODES
LL-34
in MiniMELF case especially for automatic insertion. The
Zener voltages are graded according to the international E 24
standard. Smaller voltage tolerances and higher Zener
voltages are upon request.
These diodes are also available in DO-35 case with the type
designation BZX55C...
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
Ptot
500
1)
mW
Junction Temperature
Tj
175
O
Storage Temperature Range
TS
-55 to +175
O
Power Dissipation
1)
C
C
Valid provided that electrodes are kept at ambient temperature
Characteristics at Tamb = 25oC
Thermal Resistance
Junction to Ambient Air
Forward Voltage
at IF = 100mA
1)
Symbol
Min.
Typ.
Max.
Unit
RthA
-
-
0.31)
K/mW
VF
-
-
1
V
Valid provided that electrodes are kept at ambient temperature
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
ZMM 1...ZMM200
Zener Voltage Range1)
Type
for
VZT 2)
rZJK at IZK
Ω
mA
Reverse Leakage Current
Ta =25oC
Ta = 125oC
μA
Temp coefficient
of Zener Voltage
TKvz
%/K
-0.26...-0.23
mA
V
rZJT
Ω
μA
IR at VR
V
ZMM 13)
0.75
5
0.7...0.8
<8
<50
1
--
--
--
ZMM 2V0
2.0
5
1.80...2.15
<85
<600
1
<100
<200
1
-0.09...-0.06
ZMM 2V2
2.2
5
2.08...2.33
<85
<600
1
<75
<160
1
-0.09...-0.06
Vznom
V
lZT
Dynamic Resistance
ZMM 2V4
2.4
5
2.28...2.56
<85
<600
1
<50
<100
1
-0.09...-0.06
ZMM 2V7
2.7
5
2.5...2.9
<85
<600
1
<10
<50
1
-0.09...-0.06
ZMM 3V0
3.0
5
2.8...3.2
<85
<600
1
<4
<40
1
-0.08...-0.05
ZMM 3V3
3.3
5
3.1...3.5
<85
<600
1
<2
<40
1
-0.08...-0.05
ZMM 3V6
3.6
5
3.4...3.8
<85
<600
1
<2
<40
1
-0.08...-0.05
ZMM 3V9
3.9
5
3.7...4.1
<85
<600
1
<2
<40
1
-0.08...-0.05
ZMM 4V3
4.3
5
4.0...4.6
<75
<600
1
<1
<20
1
-0.06...-0.03
ZMM 4V7
4.7
5
4.4...5.0
<60
<600
1
<0.5
<10
1
-0.05...+0.02
ZMM 5V1
5.1
5
4.8...5.4
<35
<550
1
<0.1
<2
1
-0.02...+0.02
ZMM 5V6
5.6
5
5.2...6.0
<25
<450
1
<0.1
<2
1
-0.05...+0.05
ZMM 6V2
6.2
5
5.8...6.6
<10
<200
1
<0.1
<2
2
0.03...0.06
ZMM 6V8
6.8
5
6.4...7.2
<8
<150
1
<0.1
<2
3
0.03...0.07
ZMM 7V5
7.5
5
7.0...7.9
<7
<50
1
<0.1
<2
5
0.03...0.07
ZMM 8V2
8.2
5
7.7...8.7
<7
<50
1
<0.1
<2
6.2
0.03...0.08
ZMM 9V1
9.1
5
8.5...9.6
<10
<50
1
<0.1
<2
6.8
0.03...0.09
ZMM 10
10
5
9.4...10.6
<15
<70
1
<0.1
<2
7.5
0.03...0.1
ZMM 11
11
5
10.4...11.6
<20
<70
1
<0.1
<2
8.2
0.03...0.11
ZMM 12
12
5
11.4...12.7
<20
<90
1
<0.1
<2
9.1
0.03...0.11
ZMM 13
13
5
12.4...14.1
<26
<110
1
<0.1
<2
10
0.03...0.11
ZMM 15
15
5
13.8...15.6
<30
<110
1
<0.1
<2
11
0.03...0.11
ZMM 16
16
5
15.3...17.1
<40
<170
1
<0.1
<2
12
0.03...0.11
ZMM 18
18
5
16.8...19.1
<50
<170
1
<0.1
<2
13
0.03...0.11
ZMM 20
20
5
18.8...21.2
<55
<220
1
<0.1
<2
15
0.03...0.11
ZMM 22
22
5
20.8...23.3
<55
<220
1
<0.1
<2
16
0.04...0.12
ZMM 24
24
5
22.8...25.6
<80
<220
1
<0.1
<2
18
0.04...0.12
ZMM 27
27
5
25.1...28.9
<80
<220
1
<0.1
<2
20
0.04...0.12
ZMM 30
30
5
28...32
<80
<220
1
<0.1
<2
22
0.04...0.12
ZMM 33
33
5
31...35
<80
<220
1
<0.1
<2
24
0.04...0.12
ZMM 36
36
5
34...38
<80
<220
1
<0.1
<2
27
0.04...0.12
ZMM 39
39
2.5
37...41
<90
<500
0.5
<0.1
<5
30
0.04...0.12
ZMM 43
43
2.5
40...46
<90
<500
0.5
<0.1
<5
33
0.04...0.12
ZMM 47
47
2.5
44...50
<110
<600
0.5
<0.1
<5
36
0.04...0.12
ZMM 51
51
2.5
48...54
<125
<700
0.5
<0.1
<10
39
0.04...0.12
ZMM 56
56
2.5
52...60
<135
<700
0.5
<0.1
<10
43
0.04...0.12
ZMM 62
62
2.5
58...66
<150
<1000
0.5
<0.1
<10
47
0.04...0.12
ZMM 68
68
2.5
64...72
<200
<1000
0.5
<0.1
<10
51
0.04...0.12
ZMM 75
75
2.5
70...79
<250
<1000
0.5
<0.1
<10
56
0.04...0.12
ZMM 82
82
2.5
77...87
<300
<1500
0.25
<0.1
<10
62
0.05...0.12
ZMM 91
91
1
85...96
<450
<2000
0.1
<0.1
<10
68
0.05...0.12
ZMM 100
100
1
94...106
<450
<5000
0.1
<0.1
<10
75
0.05...0.12
ZMM 110
110
1
104...116
<600
<5000
0.1
<0.1
<10
82
0.05...0.12
ZMM 120
120
1
114...127
<800
<5500
0.1
<0.1
<10
91
0.05...0.12
ZMM 130
130
1
124...141
<950
<6000
0.1
<0.1
<10
100
0.05...0.12
ZMM 150
150
1
138...156
<1250
<6500
0.1
<0.1
<10
110
0.05...0.12
ZMM 160
160
1
153...171
<1400
<7000
0.1
<0.1
<10
120
0.05...0.12
ZMM 180
180
1
168...191
<1700
<8500
0.1
<0.1
<10
130
0.05...0.12
ZMM 200
200
1
188...212
<2000
<10000
0.1
<0.1
<10
150
0.05...0.12
1) Tested with pulses tp = 20 ms.
2) Valid provided that electrodes are kept at ambient temperature
3) The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”. Connect
the cathode electrode to the negative pole.
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
ZMM 1...ZMM200
Breakdown characteristics
Tj = constant (pulsed)
mA
50
ZMM...
Tj=25o C
ZMM 1
Iz
ZMM 3.9
ZMM 2.7
ZMM 3.3
ZMM 6.8
ZMM 4.7
40
ZMM 8.2
ZMM 5.6
30
20
Test current Iz
5mA
10
0
0
1
2
3
5
4
7
6
8
10 V
9
Vz
Breakdown characteristics
Tj = constant (pulsed)
ZMM...
mA
30
Tj=25o C
ZMM 10
ZMM 12
Iz
ZMM 15
20
ZMM 18
ZMM 22
ZMM 27
Test current Iz
5mA
10
ZMM 33
ZMM 36
0
0
10
20
30
40 V
Vz
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
ZMM 1...ZMM200
Breakdown characteristics
Tj = constant (pulsed)
ZMM...
mA
10
Iz
Tj=25o C
ZMM 39
ZMM 51
ZMM 43
ZMM 47
8
Test current Iz
5mA
6
4
2
0
0
10
20
30
40
50
60
70
80
90
100 V
Vz
Admissible power dissipation
versus ambient temperature
Forward characteristics
Valid provided that electrodes are kept
at ambient temperature.
mA
10
ZMM...
mW
500
ZMM...
3
10 2
iF
P tot
400
10
o
Tj=100 C
1
300
o
Tj=25 C
10
10
10
-1
200
-2
-3
100
10
-4
10 -5
0
0
0.2
0.4
0.6
0.8
1V
VF
0
200o C
100
Tamb
4
JinYu
semiconductor
www.htsemi.com
Date:2011/05
ZMM 1...ZMM200
Pulse thermal resistance
versus pulse duration
Dynamic resistance
versus Zener current
Valid provided that the electrodes are kept
at ambient temperature.
K/W
ZMM...
ZMM...
3
10
1000
o
Tj =25 C
7
5
5
4
r thA
4
r zj
3
3
2
2
10
0.5
2
7
100
0.2
5
5
4
4
0.1
3
3
0.05
2
2
0.02
10
0.01
10
2.7
ZMM1
V=0
7
3.6
4.7
5
5
4
4
tp
tp
3
V=
3
PI
T
5.1
2
2
T
10 -5
10
-4
10
-3
10
-2
10
tp
ZMM5.6
1
1
-1
0.1
10 S
1
2
5
1
2
5
10
2
100mA
5
Iz
Dynamic resistance
versus Zener current
Capacitance versus
Zener voltage
ZMM...
pF
1000
100
ZMM...
o
Tj =25 C
o
Tj =25 C
7
5
r zj
5
Ctot
4
3
4
33
VR =1V
3
2
27
22
VR =2V
2
10
18
100
7
5
15
5
4
VR =1V
12
VR =2V
3
4
10
3
2
6.8/8.2
2
ZMM6.2
1
0.1
10
1
2
3
4 5
10
2
3
4 5
2
5
1
2
5
10
2
5
100mA
100V
Vz at Iz=5 mA
Iz
5
JinYu
semiconductor
www.htsemi.com
Date:2011/05
ZMM 1...ZMM200
Thermal differential resistance
versus Zener voltage
Dynamic resistance
versus Zener current
10
Valid provided that electrodes are kept
at ambient temperature
ZMM...
3
10
o
Tj =25 C
ZMM...
3
r zth =RthA.Vz.
7
5
4
5
Vz
Tj
3
4
r zj
2
3
10
2
10
2
r zth
5
4
2
3
2
7
47+51
43
39
5
10
4
ZMM36
5
4
3
3
negative
2
positive
2
10
1
2
0.1
3
4 5
2
1
3
4 5
10mA
2
1
3
4 5
2
10
Iz
3
4 5
100V
Vz at Iz=5 mA
Dynamic resistance
versus Zener voltage
Temperature dependence of Zener voltage
versus Zener voltage
mV/K
25
ZMM...
100
ZMM...
7
5
r zj
Vz
Tj
4
20
5mA
Iz=1mA
20mA
3
15
2
10
10
7
5
5
4
3
0
2
o
Tj =25 C
Iz=5 mA
1
1
2
3
4 5
10
2
3
4 5
100V
Vz at Iz=5 mA
-5
1
2
3
4 5
10
2
3
4 5
100V
Vz at Iz=5 mA
6
JinYu
semiconductor
www.htsemi.com
Date:2011/05
ZMM 1...ZMM200
Temperature dependence of Zener voltage
versus Zener voltage
mV/K
Change of Zener voltage
versus junction temperature
V
ZMM...
ZMM...
9
100
Iz=5 mA
8
Vz bei Iz=5mA
7
80
Vz
Tj
51V
Vz
6
43V
5
60
36V
4
40
3
2
1
20
0
Iz=5 mA
-1
0
0
20
60
40
80
0
100V
20
40
60
80
100
Vz at Iz=5 mA
Tj
Change of Zener voltge from turn-on
up to the point of thermal equilibrium
versus Zener voltage
Change of Zener voltage
versus junction temperature
V
ZMM...
V
1.6
0.8
X)
25
Vz=35 V
0.7
o
140 C
120
15
1.4
10
0.6
ZMM...
Vz=rzth .Iz
Iz=5 mA
1.2
Vz
Vz
0.5
1
8
0.4
0.8
7
0.3
6.2
0.2
5.9
0.1
0
5.1
-0.1
X)
at Iz=5 mA
-0.2
0
20
40
60
80
1
-0.2
4.7
3.6
100
120
0.4
0.2
5.6
0
0.6
o
140 C
-0.4
1
2
3
4 5
10
2
3
4 5
100V
Tj
Vz at Iz=5 mA
7
JinYu
semiconductor
www.htsemi.com
Date:2011/05
ZMM 1...ZMM200
Change of Zener voltge from turn-on
up to the point of thermal equilibrium
versus Zener voltage
V
ZMM...
5
Vz=rzth .Iz
4
Vz
3
Iz=5 mA
2
1
Iz=2 mA
0
0
20
40
60
80
100V
Vz at Iz=5 mA
8
JinYu
semiconductor
www.htsemi.com
Date:2011/05