H8550 Shantou Huashan Electronic Devices Co.,Ltd. █ PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃ TO-92 T j ——Junction Temperature…………………………………150℃ P C ——Collector Dissipation…………………………………1W VCBO——Collector-Base Voltage………………………………-40V 1―Emitter，E 2―Base，B 3―Collector，C VCEO——Collector-Emitter Voltage……………………………-25V V EBO ——Emitter-Base Voltage………………………………-6V I C ——Collector Current………………………………………-1.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current -0.1 μA VCB=-35V, IE=0 IEBO Emitter Cut-off Current -0.1 μA VEB=-6V, IC=0 HFE（1） DC Current Gain 85 HFE（2） 40 VBE VCE=-1V, IC=-100mA 500 VCE=-1V, IC=-800mA -1 V VCE=-1V, IC=-10mA VCE(sat） Collector- Emitter Saturation Voltage -0.5 V IC=-800mA, IB=-80mA VBE(sat) Base- Emitter Saturation Voltage -1.2 V IC=-800mA,IB=-80mA BVCBO Collector-Base Breakdown Voltage -40 V IC=-100μA，IE=0 BVCEO Collector-Emitter Breakdown Voltage -25 V IC=-2mA，IB=0 BVEBO Emitter- Base Breakdown Voltage -6 V IE=-100μA，IC=0 Cob Output Capacacitance pF VCB=-10V,IE=0，f=1MHz fT Current Gain-Bandwidth Product Base- Emitter Voltage 15 100 MHz VCE=-10V, IC=-50mA █ hFE Classification B 85—160 C D E 120—200 160—300 270—500 Shantou Huashan Electronic Devices Co.,Ltd. H8550