P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD436 █ APPLICATIONS Medium Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 40W VCBO ——Collector-Base Voltage………………………… -32V VCES ——Collector-Emitter Voltage……………………… -32V 1―Base，B 2―Collector，C 3―Emitter, E VEBO——Emitter-Base Voltage……………………………… -5V IC——Collector Current（DC）……………………………… -4A IC——Collector Current（Pulse）………………………………-7A IB——Base Current（DC）……………………………………-1A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO(SUS) Characteristics Collector-Emitter Sustaining Voltage ICBO Collector Cutoff Current IEBO Emitter-Base Cutoff Current ICES Collector Cutoff Current Min Typ Max -32 Unit V Test Conditions IC=-100mA, IB=0 -100 μA VCB=-32V, IE=0 -1 mA VEB=-5V, IC=0 -100 μA VCE=-32V, VBE=0 40 140 VCE=-5V, IC=-10mA *HFE（2） 85 140 VCE=-1V, IC=-500mA *HFE（3） 50 HFE（1） DC Current Gain *VCE(sat1) Collector- Emitter Saturation Voltage *VBE(on) Base- Emitter On Voltage fT Current Gain-Bandwidth Product *Pulse Test: PW=300μS,Duty Cycle=1.5% Pulsed VCE=-1V, IC=-2A -0.2 3 -0.5 V IC=-2A, IB=-0.2A -1.1 V VCE=-1V,IC=-2A, MHz Ic=-250mA, VCE=-1V Shantou Huashan Electronic Devices Co.,Ltd. P N P S I L I C O N T RAN S I S T O R HBD436