Shantou Huashan Electronic Devices Co.,Ltd. HCP6C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=6A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description Standard gate triggering SCR is suitable for the application where requiring high bi-directional blocking voltage capability and also suitable for over voltage protection, motor control cicuit in power tool, inrush current limit circuit and heating control system. █ Absolute Maximum Ratings（Ta=25℃ unless otherwise specified） T s t g ——Storage Temperature ------------------------------------------------------ -40~125℃ T j ——Operating Junction Temperature ---------------------------------------------- -40~125℃ VDRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V IT（RMS）——R.M.S On-State Current（180º Conduction Angles）------------------------------------------6A IT(AV) ——Average On-State Current (Half Sine Wave : TC = 106 °C) ----------------------------------------3.8A ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ------------------------- 66A PGM ——Forward Peak Gate Power Dissipation (Ta=25℃) --------------------------------------------------- 5W IFGM ——Forward Peak Gate Current -------------------------------------------------------------------------------- 2A VRGM ——Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V HCP6C60 Shantou Huashan Electronic Devices Co.,Ltd. █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items Min. Typ. Max. Unit Conditions 10 200 uA VAK=VDRM Tc=25℃ Tc=125℃ Peak On-State Voltage (1) 1.6 V ITM=9A,tp=380µs IGT Gate Trigger Current（2） 15 VGT Gate Trigger Voltage (2) 1.5 VGD Non-Trigger Gate Voltage IH Holding Current Rth(j-c) Thermal Resistance 3.12 ℃/W Junction to Case Rth(j-a) Thermal Resistance 89 ℃/W Junction to Ambient dv/dt Critical Rate of Rise Off-state Voltage V/µs Linear slope up to VD=VDRM67% Gate open Tj=125℃ IDRM Repetitive Current VTM Peak Off-State mA 20 200 VAK =6V(DC), RL=10 ohm Tc=25℃ V V 0.2 VAK =6V(DC), RL=10 ohm Tc=25℃ VAK =12V, RL=100 ohm Tc=125℃ IT=100mA,Gate open, mA Tc=25℃ 1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%. 2. RGK current is not included in measurement █ Performance Curves FIGURE 2 – Maximum CaseTemperture Gate Voltage (v) Max. Allowable Case Temperture (°c) FIGURE 1 – Gate Characteristics Gate Current (mA) Average On-State Current (mA) Shantou Huashan Electronic Devices Co.,Ltd. FIGURE 4-Thermal Response On-State Current(A) Transient Thermal Imperdance (°c) FIGURE 3-Typical Forward Voltage(V) HCP6C60 On-State Voltage (V) Time (sec) FIGURE 5-Typical Gate Trigger Voltage VS FIGURE 6-Typical Gate Trigger Current VS Junction Temperature Junction Temperature Junction Temperature (°C) Junction Temperature (°C) Junction Temperature (°C) Dissipation (W) FIGURE 8-Power Dissipation Max. Average Power FIGURE 7-Typical Holding Current Average On-State Current (A)