N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFF640 █ APPLICATIONSL TO-220F High Voltage High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） 1 T stg ——Storage Temperature……………………………－55~150℃ T j ——Operating Junction Temperature …………………………150℃ 1―G PD —— Allowable Power Dissipation（T c=25℃）…………………43W 2―D 3―S VDSS —— Drain-Source Voltage ………………………………… 200V VDGR —— Drain-Gate Voltage (RGS=1MΩ) ……………………200V VGSS —— Gate-Source Voltage …………………………………±20V ID —— *Drain Current（Tc=25℃）…………………………………18A * Drain current limited by maximumjunction temperature █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVDSS IDSS Characteristic s Min Typ Max Unit Test Conditions Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 200 VGS(th) Gate –Source Leakage Current Gate Threshold Voltage 2.0 RDS(on) Static Drain-Source On-Resistance Forward Transconductance １３ Input Capacitance Output Capacitance １３００ １７００ VDS = 40V , ID =9A* pF 175 230 pF VDS =25V, VGS=0,f=1ＭＨｚ Reverse Transfer Capacitance 45 60 pF Turn - On Delay Time 20 50 nS Rise Time 145 300 nS Turn - Off Delay Time 145 300 nS Fall Time 110 230 nS Qg Total Gate Charge 45 58 nC VDD =100V, ID =18A RG= 25 Ω * VDS =0.8VDSS Qgs Gate–Source Charge 6.5 nC ＶＧＳ＝１０Ｖ Qgd Gate–Drain Charge 22 nC ＩＤ＝１８Ａ ＊ １８ Ａ １．５ Ｖ ２．８９ ℃／Ｗ IGSS gfs Ciss Coss Crss td(on) tr td(off) tf Is Continuous Source Current Diode Forward Voltage Thermal Resistance， Rth（j-c） Junction-to-Case *Pulse Test：Pulse Width≤300μs，Duty Cycle≤2% VSD １０ V ID=250μA ,VGS=0V μＡ VDS =200V，VGS=0 ±100 ｎＡ VGS=±20V , VDS =0V 4.0 V VDS = VGS , ID =250μA ０．１４５ ０．１８ ? VGS=10V, ID =9A S IS =18A , VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF640 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF640 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF640 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF640