PNP SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD238 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 25W 1―Emitter, E VCBO ——Collector-Base Voltage…………………………… 100V 2―Collector，C 3―Base，B VCEO ——Collector-Emitter Voltage………………………… -80V VCER——Collector-Emitter Voltage………………………… -100V VEBO——Emitter-Base Voltage………………………………… -5V IC——Collector Current（Pulse）………………………………… -6A IC——Collector Current（DC）……………………………… -2A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO Collector Cut-off Current IEBO Emitter-Base Cut-off Current hFE(1) DC Current Gain *hFE(2) Min Typ Max Unit Test Conditions -100 μA VCB=-100V, IE=0 -1 mA VEB=-5V, IC=0 40 VCE=-2V, IC=-150mA 25 VCE=-2V, IC=-1A *VCE(sat) Collector-Emitter Saturation Voltage -0.6 V Ic=-1A, IB=-0.1A *VBE(ON) Base-Emitter On Voltage -1.3 V Ic=-1A, VCE=-2V VCEO(SUS) Collector-Emitter Sustaining Voltage -80 fT Current Gain-Bandwidth Product 3 * Pulse Test:PW=350μS,Duty Cycle≤1.5% Pulsed Ic=-100mA,IB=0 MHz Ic=-250mA, VCE=-10V Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSIST OR HSBD238