Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR5100 Single Anode General Description: 100 V 5 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 5 Amperes, Ta=25°C Maximum Instantaneous Reverse Voltage VR= 100 Volt, Ta=25°C Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures SYM VRRM Spec. Limit 100 Die Sort 105 IFAV 5 VF MAX 0.85 0.84 Volt IR MAX 0.1 0.09 mA Amp Cj MAX IFSM Tj TSTG UNIT Volt pF 120 -65 to +125 -65 to +125 Amp °C °C Specification apply to die only. Actual performance may degrade when assembled. MEMT does not guarantee device performance after assembly. Data sheet information is subjected to change without notice. DICE OUTLINE DRAWING A C ITEM Die Size Top Metal Pad Size Passivation Seal Thickness (Min) Thickness (Max) um2 1838 1738 1758 254 305 Mil2 72.36 68.4 69.2 10 12 PS: B Top-side Metal D DIM A B C D SiO2 Passivation P+ Guard Ring Back-side Metal (1)Cutting street width is around 80um(3.14mil). (2)Both of top-side and back-side metals are Ti/Ni/Ag.