ETC SBF13007

SBF13007
SemiWell Semiconductor
High Voltage Fast-Switching NPN Power Transistor
Features
Symbol
○
1.Base
2.Collector
○
c
- Very High Switching Speed (Typical [email protected])
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical [email protected]/1.0A)
- Wide Reverse Bias S.O.A
○
3.Emitter
General Description
This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching mode power
supply.
TO-220F
1
2
3
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage ( VBE = 0 )
700
V
VCEO
Collector-Emitter Voltage ( IB = 0 )
400
V
VEBO
Emitter-Base Voltage ( IC = 0 )
9.0
V
Collector Current
8.0
A
Collector Peak Current ( tP < 5 ms )
16
A
Base Current
4.0
A
IBM
Base Peak Current ( tP < 5 ms )
8.0
A
PC
Total Dissipation at TC = 25 °C
36
W
- 65 ~ 150
°C
150
°C
Value
Units
3.47
°C/W
IC
ICM
IB
TSTG
TJ
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Oct, 2002. Rev. 2
1/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
SBF13007
Electrical Characteristics
Symbol
ICEV
VCEO(sus)
VCE(sat)
VBE(sat)
( TC = 25 °C unless otherwise noted )
Parameter
Condition
Collector Cut-off Current
( VBE = - 1.5V )
VCE = 700V
VCE = 700V
Collector-Emitter Sustaining Voltage
( IB = 0 )
IC = 10 mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Typ
Max
Units
-
-
1.0
5.0
mA
400
-
-
V
IC = 2.0A
IC = 5.0A
IC = 8.0A
IC = 5.0A
IB = 0.4A
IB = 1.0A
IB = 2.0A
IB = 1.0A
TC = 100 °C
-
-
IC = 2.0A
IC = 5.0A
IC = 5.0A
IB = 0.4A
IB = 1.0A
IB = 1.0A
TC = 100 °C
-
-
IC = 2.0A
IC = 5.0A
VCE = 5V
VCE = 5V
10
5
-
40
40
-
1.5
0.17
3.0
0.4
㎲
0.5
1.0
2.5
2.5
1.2
1.6
1.5
V
V
hFE
DC Current Gain
ts
tf
Resistive Load
Storage Time
Fall Time
IC = 5.0A
IB1 = 1.0A
ts
tf
Inductive Load
Storage Time
Fall Time
VCC = 15V
IB1 = 1.0A
LC = 0.35mH
IC = 5.0A
IB2 = -2.5A
Vclamp = 300V
-
0.8
0.06
2.0
0.12
㎲
ts
tf
Inductive Load
Storage Time
Fall Time
VCC = 15V
IB1= 1.0A
LC = 0.35mH
IC = 5.0A
IB2 = -2.5A
Vclamp = 300V
TC = 100 °C
-
1.0
0.07
3.0
0.15
㎲
VCC = 125V
IB2 = - 1.0A
TP = 25㎲
※ Notes :
Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%
2/6
TC = 100 °C
Min
SBF13007
Fig 1. Static Characteristics
Fig 2. DC Current Gain
45
12
IB = 1600mA
35
IB = 1200mA
hFE, DC Current Gain
IC, Collector Current [A]
40
IB = 2000mA
10
IB = 1000mA
8
IB = 800mA
IB = 600mA
6
IB = 400mA
4
IB = 200mA
o
TJ = 125 C
30
25
o
TJ = 25 C
20
15
※ Notes :
10
VCE = 5V
VCE = 1V
2
5
IB = 0mA
0
0
1
2
3
4
5
6
7
8
9
0
0.01
10
0.1
1
10
IC, Collector Current [A]
VCE, Collector-Emitter Voltage [V]
Fig 4. Base-Emitter Saturation Voltage
Fig 3. Collector-Emitter Saturation Voltage
1.2
1.1
VBE, Base-Emitter Voltage [V]
VCE, Collector-Emitter Voltage [V]
10
1
o
TJ = 125 C
0.1
※ Note :
hFE = 5
o
TJ = 25 C
0.01
0.1
1
1.0
o
TJ = 25 C
0.9
0.8
0.7
0.6
o
TJ = 125 C
0.5
※ Note :
hFE = 5
0.4
0.3
0.1
10
1
IC, Collector Current [A]
10
IC, Collector Current [A]
Fig 6. Resistive Load Storage Time
Fig 5. Resistive Load Fall Time
1000
10
※ Notes :
VCC = 125V
hFE = 5
IB1 = - IB2
o
t, Time [us]
t, Time [ns]
TJ = 25 C
100
※ Notes :
VCC = 125V
hFE = 5
IB1 = - IB2
10
0
2
4
6
IC, Collector Current [A]
8
o
TJ = 25 C
1
10
0
1
2
3
4
5
6
7
8
IC, Collector Current [A]
3/6
SBF13007
Fig 7. Safe Operation Areas
Fig 8. Reverse Biased Safe Operation
Areas
10
8
IC, Collector Current [A]
IC, Collector Current [A]
※ Notes :
TJ ≤ 100 °C
IB1 = 2 A
RBB = 0 Ω
LC = 0.2mH
10 µs
1
10
100 µs
0
10
DC
500 µs
-1
10
1ms
※ Single Pulse
6
VBE(off)
-5V
-3V
4
-1.5V
2
-2
10
0
1
10
2
10
3
10
10
Fig 9. Power Derating Curve
Power Derating Factor (%)
125
100
75
50
25
0
0
50
100
150
o
TC, Case Temperature ( C)
4/6
0
100
200
300
400
500
600
VCE, Collector-Emitter Clamp Voltage [V]
VCE, Collector-Emitter Clamp Voltage [V]
200
700
800
SBF13007
Inductive Load Switching & RBSOA Test Circuit
LC
f
IC
IB1
IB
VCE
D.U.T
RBB
VClamp
VCC
VBE(off)
Resistive Load Switching Test Circuit
RC
IC
IB1
IB
VCE
D.U.T
RBB
VCC
VBE(off)
5/6
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