XL0102DA SENSITIVE GATE SCR TO92 (Plastic) On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V K G A This series of Silicon Controlled R ectifiers uses a high performance PNPN technology. This part is intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL VDRM PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature PARAMETER Repetitive Peak Off State Voltage CONDITIONS All Conduction Angle, TL = 60 ºC Half Cycle, Θ = 180 º, TL = 60 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25º C t = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. Min. Max. Unit 1 2 0.1 +125 +150 260 A A A A A2s V A W W ºC ºC ºC 0.8 0.5 8 7 0.24 8 -40 -40 1.6 mm from case, 10s max. CONDITIONS VOLTAGE Unit RGK = 1 KΩ D 400 V Jan - 02 XL0102DA SENSITIVE GATE SCR Electrical Characteristics SYMBOL PARAMETER CONDITIONS IGT IDRM Gate Trigger Current Off-State Leakage Current VTM VGT VGD IH IL dv / dt On-state Voltage Gate Trigger Voltage Gate Non-Trigger Voltage Holding Current Latching Current di / dt tgd Critical Rate of Current Rise IG = 10 mA, diG/dt = 0.1 A/µs, Tj = 125 ºC Rth(j-l) Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient Rth(j-a) Critical Rate of Voltage Rise SENSITIVITY Unit 02 200 100 1 1.93 0.8 0.1 5 6 25 µA µA µA V V V mA mA V/µs VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX MAX VD = VDRM , RGK = 1KΩ, Tj = 125 ºC MAX Tj = 25 ºC IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VDRM , RGK = 1KΩ, RL = 3.3KΩ, Tj = 125 ºC MIN IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC MAX MAX IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC VD = 0.67 x VDRM , RGK = 1KΩ, Tj = 125 ºC TYP MIN TYP Gate Controlled Delay Time IG = 10 mA, diG/dt = 0.1 A/µs, Tj = 25 ºC ITM = 3x IT(AV), VD = VDRM 30 500 A/µs 80 ºC/W 150 ºC/W ns PART NUMBER INFORMATION XL 01 02 D A 00 BU PACKAGING FORMING CHRISTMAS LIGHT CASE VOLTAGE CURRENT SENSITIVITY PACKAGE MECHANICAL DATA TO92 (Plastic) REF. A C H a D B b G Marking: type number Weight: 0.2 g E F A B C D E F G H a b Min. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 DIMENSIONS Milimeters Typ. 1.5 4.6 2.54 1.27 4.6 14.1 3.6 1.5 0.43 0.38 Max. 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 Jan - 02