FAIRCHILD FMB857B

FMB857B
PNP Epitaxial Silicon Transistor
• This device is designed for general purpose amplifier application at collector currents to 300mA.
• Sourced from process 68.
C2
E1
C1
B2
pin #1
E2
SSOT-6
Mark: .N2
Dot denotes pin #1
B1
Absolute Maximum Ratings TC=25°C unless otherwise noted
Value
Units
VCBO
Symbol
Collector-Base Voltage
Parameter
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
500
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Ta=25°C unless otherwise noted
Symbol
Max.
Units
PD
Total Device Dissipation
Derate above 25°C
Parameter
700
5.6
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
180
°C/W
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 10μA
50
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1mA
45
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10μA
5
V
BVCEX
Collector-Emitter Cutoff Voltage
IC = 10μA, VBE = 1V
50
nA
ICBO
Collector Cut-off Current
VCB = 30V, T = 25°C
T =150°C
hFE
DC Current Gain
VCE = 5V, IC = 2mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBE(on)
Base-Emitter On Voltage
VCE = 5V, IC = 2mA
VCE = 5V, IC = 10mA
15
4000
220
0.6
nA
475
0.3
0.65
V
0.75
0.82
V
NOTES: All voltages (V) and currents (A) are negative polarity for PNP transistors.
© 2007 Fairchild Semiconductor Corporation
FMB857B Rev. 1.0.0
www.fairchildsemi.com
1
FMB857B — PNP Epitaxial Silicon Transistor
September 2007
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
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This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30
© 2007 Fairchild Semiconductor Corporation
FMB857B Rev. 1.0.0
www.fairchildsemi.com
2
FMB857B PNP Epitaxial Silicon Transistor
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