FAIRCHILD FGA90N30D

FGA90N30D
300V PDP IGBT
Features
Description
• High Current Capability
Employing Unified IGBT Technology, FGA90N30D provides low
conduction and switching loss. FGA90N30D offers the optimum
solution for PDP applications where low condution loss is
essential.
• Low saturation voltage: VCE(sat), Typ = [email protected] IC = 20A
• High Input Impedance
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted
Description
FGA90N30D
Units
VCES
Collector-Emitter Voltage
300
V
VGES
Gate-Emitter Voltage
± 30
V
IC
Collector Current
ICM
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
(Note 1)
@ TC = 25°C
90
A
@ TC = 25°C
220
A
@ TC = 100°C
10
A
40
A
Maximum Power Dissipation
@ TC = 25°C
219
W
Maximum Power Dissipation
@ TC = 100°C
87
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Typ.
Max.
Units
RθJC(IGBT)
Symbol
Thermal Resistance, Junction-to-Case for IGBT
Parameter
--
0.57
°C/W
RθJC(DIODE)
Thermal Resistance, Junction-to-Case for Diode
--
1.56
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
©2006 Fairchild Semiconductor Corporation
FGA90N30D Rev. A
1
www.fairchildsemi.com
FGA90N30D 300V PDP IGBT
September 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA90N30D
FGA90N30D
TO-3P
--
--
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250μA
300
--
--
V
ΔBVCES/
ΔTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
--
0.6
--
V/°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
100
μA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
± 250
nA
2.5
4.0
5.0
V
IC = 20A, VGE = 15V
--
1.1
1.4
V
IC = 90A, VGE = 15V
--
1.9
--
V
IC = 90A, VGE = 15V,
TC = 125°C
--
2.0
--
V
--
1700
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
--
290
-
pF
--
80
-
pF
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
--
30
--
ns
tr
Rise Time
--
200
--
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 200V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25°C
--
110
--
ns
--
140
300
ns
--
0.15
--
mJ
--
0.45
--
mJ
Ets
Total Switching Loss
--
0.6
--
mJ
td(on)
Turn-On Delay Time
--
30
--
ns
tr
Rise Time
--
210
--
ns
td(off)
Turn-Off Delay Time
--
110
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
0.72
--
mJ
Ets
Total Switching Loss
--
0.88
--
mJ
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 200V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 125°C
VCE = 200V, IC = 20A,
VGE = 15V
2
FGA90N30D Rev. A
--
200
--
ns
--
0.16
--
mJ
--
87
130
nC
--
12
18
nC
--
38
57
nC
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FGA90N30D 300V PDP IGBT
Package Marking and Ordering Information
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 10A
trr
Diode Reverse Recovery Time
IF = 10A
dI/dt = 200A/μs
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
3
FGA90N30D Rev. A
Min.
Typ.
Max.
Units
TC = 25°C
--
1.1
1.4
V
TC = 125°C
--
0.9
--
TC = 25°C
--
21
--
TC = 125°C
--
35
--
TC = 25°C
--
2.8
--
TC = 125°C
--
5.6
--
TC = 25°C
--
29.4
--
TC = 125°C
--
98
--
ns
A
nC
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FGA90N30D 300V PDP IGBT
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Figure 1. Typical Output Characteristics
100
Figure 2. Typical Output Characteristics
100
o
20V
o
TC = 25 C
12V
Collector Current, I [A]
10V
80
C
Collector Current, IC [A]
12V
10V
15V
80
60
V GE= 8 V
40
60
V GE= 8 V
40
20
20
0
0
0
1
2
3
4
5
0
6
1
Figure3. Typical Saturation Voltage
Characteristics
3
4
5
6
Figure 4. Transfer characteristics
C o m m o n E m itte r
V Ge = 15V
80
2
C o lle c t o r - E m it te r V o lt a g e , V C E [ V ]
C o lle c to r -E m itte r V o lta g e , V C E [V ]
C o m m o n E m itte r
V CE = 2 0V
100
o
Tc = 25 C
o
Tc = 125 C
TC =
60
40
o
25 C
o
TC = 125 C
C
Collector Current, I [A]
Collector Current, IC [A]
TC = 125 C
20V
15V
10
20
0
1
0
1
2
3
0
2
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
8
10
6
CE
2 .0
90A
1 .8
1 .6
1 .4
40A
1 .2
20A
1 .0
Ic= 1 0 A
0 .8
0 .6
0 .4
25
50
C o m m o n E m itt e r
o
TC = 25 C
[V]
C o m m o n E m it t e r
V GE = 15V
2 .2
Collector - Emitter Voltage, V
[V]
CE
6
Figure 6. Saturation Voltage vs. VGE
2 .4
Collector-Emitter Voltage, V
4
G a te - E m itte r V o lta g e , V G E [V ]
C o lle c to r - E m itte r V o lta g e , V C E [V ]
75
100
5
4
3
90A
2
20A
1
40A
10A
0
125
4
8
12
16
20
o
C a s e T e m p e ra tu re , T C ( C )
G a te - E m itte r V o lta g e , V G E [V ]
4
FGA90N30D Rev. A
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FGA90N30D 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Charaacteristics
6
C o m m o n E m it t e r
o
TC = 125 C
C ie s
4
Capacitance [pF]
Collector - Emitter Voltage, V
CE
[V]
5
3
90A
2
20A
40A
1000
Coes
C re s
1
C o m m o n E m itte r
V GE = 0V , f = 1M H z
100
10A
o
TC = 25 C
0
4
8
12
16
20
0 .1
1
10
C o lle c to r - E m itte r V o lta g e , V C E [V ]
G a te - E m itte r V o lta g e , V G E [V ]
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
15
Ic M A X (P u ls e d )
C o m m o n E m it t e r
RL = 10 ohm
Collector Current, Ic [A]
[V]
GE
Gate-Emitter Voltage, V
Vcc = 200V
5
1m s
10
D C O p e ra tio n
1
S in g le N o n re p e titive
o
P u lse T c = 2 5 C
C u rve s m u s t b e d e ra te d
lin e a rly w ith in c re a s e
in te m p e ra tu re
0 .1
0 .0 1
0
10
100μs
Ic M A X (C o n tin u o u s )
10
0
50μs
100
o
TC = 25 C
20
30
40
50
60
70
80
0 .1
90
1
G a te C h a rg e , Q g [n C ]
10
100
1000
C o lle c to r - E m itte r V o lta g e , V C E [V ]
Figure 11. Turn-On Characteristics vs. Gate
Resistance
Figure 12. Turn-Off Characteristics vs. Gate
Resistance
1000
1000
C o m m o n E m itte r
V CC = 20 0 V , V GE = 15V
IC = 2 0 A
o
T C = 25 C
o
tr
Switching Time [ns]
Switching Time [ns]
T C = 125 C
100
td (o n )
tf
100
td (o ff)
C o m m o n E m itte r
V CC = 20 0 V , V GE = 15 V
IC = 2 0 A
o
TC = 25 C
o
TC = 125 C
10
10
0
20
40
60
80
0
100
40
60
80
100
G a t e R e s is t a n c e , R G [ Ω ]
G a te R e s is ta n c e , R G [ Ω ]
5
FGA90N30D Rev. A
20
www.fairchildsemi.com
FGA90N30D 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Figure 14.Turn-Off Characteristics vs.
Collector Current
1000
1000
C o m m o n E m it t e r
V GE = 15V , R G = 10Ω
o
TC = 25 C
tf
o
Switching Time [ns]
Switching Time [ns]
TC = 125 C
tr
100
td (o n )
100
td ( o f f )
C o m m o n E m it te r
V GE = 15 V , R G = 10 Ω
o
TC = 25 C
o
TC = 125 C
10
10
0
20
40
60
80
0
100
20
40
60
80
100
C o lle c to r C u r r e n t , Ic [A ]
C o lle c to r C u r r e n t , Ic [ A ]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16.Switching Loss vs. Collector Current
10
1
Switching Loss [mJ]
Switching Loss [mJ]
E o ff
Eon
0 .1
C o m m o n E m itte r
V CC = 200V , V GE = 15V
IC = 2 0 A
1
E o ff
0 .1
C o m m o n E m it t e r
V GE = 15 V , R G = 1 0 Ω
Eon
o
TC = 25 C
o
TC = 25 C
o
TC = 125 C
o
0 .0 1
TC = 125 C
0 .0 1
0
20
40
60
80
100
0
G a te R e s is t a n c e , R G [ Ω ]
20
40
60
80
100
C o lle c t o r C u r r e n t , I c [ A ]
Figure 17. Turn-Off SOA Figure
1000
Collector Current, IC [A]
Safe O perating Area
o
V G E = 20V , T C = 100 C
100
10
1
10
100
1000
C ollector-E m itter V oltage, V C E [V ]
6
FGA90N30D Rev. A
www.fairchildsemi.com
FGA90N30D 300V PDP IGBT
Typical Performance Characteristics
FGA90N30D 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 18. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2
0.1
0.05
0.02
0.01
Pdm
0.01
t1
t2
single pulse
1E-3
1E-5
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Figure 19. Forward Characteristics
Figure 20. Typical Reverse Recovery
Current
5
100
I F = 10A
o
10
Reverse Recovery Current , Irr [A]
Forward Current , IF [A]
T J = 125 C
o
T J = 25 C
1
o
T C = 25 C
o
T C = 125 C
0.1
0.0
0.5
1.0
1.5
2.0
o
T C = 25 C
4
3
2
1
0
100
2.5
Forw ard Voltage , V F [V]
500
di/dt [A/ μ s]
Figure 21. Typical Reverse Recovery Time
36
Reverse Recovery Time , trr [ns]
IF = 10A
o
Tc = 25 C
32
28
24
100
500
di/dt [A/μ s]
7
FGA90N30D Rev. A
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TO-3P
15.60 ±0.20
3.80 ±0.20
+0.15
3.50 ±0.20
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
1.50 –0.05
16.50 ±0.30
9.60 ±0.20
19.90 ±0.20
13.90 ±0.20
ø3.20 ±0.10
4.80 ±0.20
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
8
FGA90N30D Rev. A
0.60 –0.05
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FGA90N30D 300V PDP IGBT
Mechanical Dimensions
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or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
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affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20