FAIRCHILD HGTP1N120BN

HGTD1N120BNS, HGTP1N120BN
Data Sheet
January 2001
5.3A, 1200V, NPT Series N-Channel IGBT
Features
The HGTD1N120BNS and HGTP1N120BN are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
• 5.3A, 1200V, TC = 25oC
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49316.
Ordering Information
PART NUMBER
• 1200V Switching SOA Capability
• Typical EOFF . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.fairchildsemi.com
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
PACKAGE
BRAND
HGTD1N120BNS
TO-252AA
1N120B
HGTP1N120BN
TO-220AB
1N120BN
JEDEC TO-220AB
E
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
C
G
COLLECTOR
(FLANGE)
Symbol
C
JEDEC TO-252AA
G
COLLECTOR
(FLANGE)
G
E
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 3) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 3) at VGE = 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
ALL TYPES
1200
UNITS
V
5.3
2.7
6
±20
±30
6A at 1200V
60
0.476
10
-55 to 150
A
A
A
V
V
W
W/oC
mJ
oC
oC
300
260
8
13
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25oC.
3. VCE(PK) = 840V, TJ = 125oC, RG = 82Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
-
-
V
-
-
250
µA
-
20
-
µA
-
-
1.0
mA
-
2.5
2.9
V
-
3.8
4.3
V
6.0
7.1
-
V
VGE = ±20V
-
-
±250
nA
6
-
-
A
-
9.2
-
V
VGE = 15V
-
14
20
nC
VGE = 20V
-
15
21
nC
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
ICES
VCE(SAT)
VGE(TH)
IGES
VCE = 1200V
IC = 1.0A
VGE = 15V
TC = 25oC
TC = 125oC
TC = 150oC
TC = 25oC
TC = 150oC
IC = 50µA, VCE = VGE
Switching SOA
SSOA
TJ = 150oC, RG = 82Ω, VGE = 15V,
L = 2mH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
VGEP
IC = 1.0A, VCE = 600V
On-State Gate Charge
©2001 Fairchild Semiconductor Corporation
QG(ON)
IC = 1.0A
VCE = 600V
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TEST CONDITIONS
IGBT and Diode at TJ = 25oC
ICE = 1.0A
VCE = 960V
VGE = 15V
RG = 82Ω
L = 4mH
Test Circuit (Figure 18)
MIN
TYP
MAX
UNITS
-
15
20
ns
-
11
14
ns
-
67
76
ns
-
226
300
ns
-
70
-
µJ
Turn-On Energy (Note 5)
EON1
Turn-On Energy (Note 5)
EON2
-
172
187
µJ
Turn-Off Energy (Note 4)
EOFF
-
90
123
µJ
Current Turn-On Delay Time
td(ON)I
-
13
17
ns
-
11
15
ns
-
75
88
ns
-
258
370
ns
-
145
-
µJ
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
IGBT and Diode at TJ = 150oC
ICE = 1.0 A
VCE = 960V
VGE = 15V
RG = 82Ω
L = 4mH
Test Circuit (Figure 18)
Turn-On Energy (Note 5)
EON1
Turn-On Energy (Note 5)
EON2
-
385
440
µJ
Turn-Off Energy (Note 4)
EOFF
-
120
175
µJ
Thermal Resistance Junction To Case
RθJC
-
-
2.1
oC/W
NOTES:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
(Unless Otherwise Specified)
ICE , DC COLLECTOR CURRENT (A)
6
VGE = 15V
5
4
3
2
1
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
©2001 Fairchild Semiconductor Corporation
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
7
TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH
6
5
4
3
2
1
0
0
200
400
600
800
1000
1200
1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
200
TJ = 150oC, RG = 82Ω, L = 4mH, VCE = 960V
TC = 75oC, VGE = 15V
IDEAL DIODE
100
10
TC
75oC
75oC
110oC
110oC
VGE
15V
13V
15V
13V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 2.1oC/W, SEE NOTES
5
0.5
1.0
2.0
20
18
18
tSC
16
16
14
12
12
10
13
3.0
TC = -55oC
TC = 150oC
2
0
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 13V
0
2
6
4
8
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
TC = 25oC
1
6
5
TC = 25oC
4
TC = -55oC
3
1
0
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 15V
0
2
EOFF , TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
TJ = 150oC, VGE = 13V
TJ = 150oC, VGE = 15V
600
400
TJ = 25oC, VGE = 13V
TJ = 25oC, VGE = 15V
1
1.5
2
2.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
8
10
250
RG = 82Ω, L = 4mH, VCE = 960V
0
0.5
6
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200
200
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
800
TC = 150oC
2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1000
10
15
14.5
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
6
3
14
13.5
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
4
14
ISC
ICE, COLLECTOR TO EMITTER CURRENT (A)
5
20
VCE = 840V, RG = 82Ω, TJ = 125oC
ISC, PEAK SHORT CIRCUIT CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
300
(Unless Otherwise Specified) (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Typical Performance Curves
3
RG = 82Ω, L = 4mH, VCE = 960V
200
TJ = 150oC, VGE = 13V OR 15V
150
TJ = 25oC, VGE = 13V OR 15V
100
50
0
0.5
1
1.5
2
2.5
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
Typical Performance Curves
(Unless Otherwise Specified) (Continued)
28
RG = 82Ω, L = 4mH, VCE = 960V
RG = 82Ω, L = 4mH, VCE = 960V
24
20
16
TJ
trI , RISE TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)
24
VGE
25oC
150oC
13V
13V
25oC 15V
150oC 15V
12
1
1.5
2
2.5
16
12
TJ = 25oC, TJ = 150oC, VGE = 15V
8
4
0.5
8
0
TJ = 25oC, TJ = 150oC, VGE = 13V
20
3
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
TJ = 150oC, VGE = 13V
TJ = 25oC, VGE = 15V
64
TJ = 25oC, VGE = 13V
60
56
0.5
1
1.5
280
200
160
2
2.5
120
0.5
3
TJ = 25oC, VGE = 13V OR 15V
1
1.5
2
2.5
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
15
18
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
16
14
VGE , GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 150oC, VGE = 13V OR 15V
240
ICE , COLLECTOR TO EMITTER CURRENT (A)
TC = -55oC
12
10
8
TC = 25oC
6
TC = 150oC
4
2
0
3
320
76
68
2.5
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 150oC, VGE = 15V
72
2
360
RG = 82Ω, L = 4mH, VCE = 960V
80
1.5
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
84
1
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
VCE = 800V
12
9
6
3
IG(REF) = 1mA, RL = 600Ω, TC = 25oC
0
7
8
9
10
11
12
13
14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
©2001 Fairchild Semiconductor Corporation
15
VCE = 1200V
VCE = 400V
0
4
8
12
16
20
QG , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
(Unless Otherwise Specified) (Continued)
350
FREQUENCY = 1MHz
C, CAPACITANCE (pF)
300
CIES
250
200
150
100
COES
50
CRES
0
0
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
6
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = 110oC
5
VGE = 15V
4
3
VGE = 10V
2
1
0
0
2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
VGE = 12V
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
2.0
1.0
0.5
0.2
0.1
0.1
t1
0.05
PD
0.02
t2
0.01
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
0.005
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
VGE
90%
RHRD4120
10%
EON2
L = 4mH
EOFF
RG = 82Ω
ICE
ICE
90%
+
-
VCE
10%
VDD = 960V
tfI
td(ON)I
trI
td(OFF)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FIGURE 19. SWITCHING TEST WAVEFORMS
HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD . A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 19. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in
the calculation for EOFF; i.e., the collector current equals
zero (ICE = 0).
HGTD1N120BNS, HGTP1N120BN Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
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DenseTrench™
DOME™
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E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
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STAR*POWER is used under license
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4