Preliminary SM2G50US60 IGBT MODULE FEATURES 9 High Speed Switching 9 Low Conduction Loss : VCE(sat) = 2.1 V (typ) 9 Fast & Soft Anti-Parallel FWD 9 Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS 9 9 9 9 9 Package code : 7-PM-AA General Purpose Inverters Welding Machine Induction Heating UPS , CVCF Robotics , Servo Controls G2 E2 C2E1 E2 C1 E1 G1 Internal Circuit Diagram ABSOLUTE MAXIMUM RATINGS (Tc = 25 &) Symbol Characteristics Rating Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage IC Collector Current @ Tc = 25 50 A ICM (1) Pulsed Collector Current 100 A IF Diode Continuous Forward Current @ Tc = 25 50 A IFM Diode Maximum Forward Current 100 A PC Maximum Power Dissipation @Tc = 25 250 W Tj Operating Junction Temperature -40 ~ 150 Tstg Storage Temperature Range -40 ~ 125 Viso Isolation Voltage @ AC 1 min 2500 V 2.0 N.m 2.0 N.m 20 & & & Mounting Torque @ Power terminals screw :M5 Mounting screw :M5 V & & Notes: (1) Repetitive Rating : Pulse width Limited by Max.Junction Temperature Rev.B 1999 Fairchild Semiconductor Corporation Preliminary SM2G50US60 IGBT MODULE ELECTRICAL CHARACTERISTICS (IGBT PART) (Tc=25 &,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min BVCES C - E Breakdown Voltage VGE = 0V , IC = 250 600 - - CES/ Temperature Coeff. of VGE = 0V , IC = 1mA - 0.6 - J Breakdown Voltage ZV ZT Typ Max Units V & V/ VGE(th) G - E threshold voltage IC =50mA , VCE = VGE 5 6 8.5 V ICES Collector cutoff Current VCE = VCES , VGE = 0V - - 250 uA IGES G - E leakage Current VGE = VGES , VCE = 0V - - 100 nA VCE(sat) Collector to Emitter - 2.1 2.7 V - 2.7 - V - 4200 - pF - 400 - pF - 120 - pF Cies Input capacitance & Ic=50A, V = 15V @Tc=100& V = 0V , f = 1( Coes Output capacitance VCE = 30V Cres Reverse transfer capacitance td(on) Turn on delay time VCC = 300V , IC = 50A - 90 - ns tr Turn on rise time VGE = 15V - 65 - ns td(off) Turn off delay time RG = 13 n - 184 - ns tf Turn off fall time Inductive Load - 80 250 ns Eon Turn on Switching Loss - 1.5 - mJ Eoff Turn off Switching Loss - 0.9 - mJ Ets Total Switching Loss - 2.4 4.8 mJ Tsc Short Circuit withstand Time 10 - - uS saturation voltage Ic=50A, VGE = 15V @Tc= 25 GE GE Vcc = 300V, VGE = 15V & @Tc = 100 Qg Total Gate Charge Vcc = 300V - 220 330 nC Qge Gate-Emitter Charge VGE = 15V - 50 - nC Qgc Gate-Collector Charge Ic = 50A - 90 - nC Preliminary SM2G50US60 IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25 &,Unless Otherwise Specified) Symbol VFM Trr Irr Characteristics Diode Forward Voltage Test Conditions IF=50A Diode Reverse IF=50A, VR=200V Recovery Time di/dt= -100A/uS Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge Min Min Typ & Tc =100& Tc =25& Tc =100& Tc =25& Tc =100& Tc =25& Tc =100& Tc =25 Max Units - 1.9 2.8 - 1.8 - - 90 130 - 130 - - 5 6.5 - 7 - - 225 422 - 455 - V nS A nC THERMAL RESISTANCE Symbol Characteristics R~JC Typ Max Junction-to-Case(IGBT Part, Per 1/2 Module) - 0.5 R~JC Junction-to-Case(DIODE Part, Per 1/2 Module) - 1.0 R~CS Case-to-Sink ( Conductive grease applied) - 0.15 Weight Weight of Module - 190 Units &/W &/W &/W &/W Preliminary SM2G50US60 IGBT MODULE 160 160 15V 20V 15V 20V 13V 13V COLLECTOR CURRENT IC [A] COLLECTOR CURRENT IC [A] 120 12V 11V 80 VGE = 10V 40 120 12V 80 11V VGE = 10V 40 Common Emitter Tc = 125 & Common Emitter Tc = 25 & 0 0 2 4 6 0 8 10 0 4 6 8 10 160 160 Common Emitter Vce = 5V Common Emitter Vge = 15V 120 Tc = 25 & 125 COLLECTOR CURRENT IC [A] 120 COLLECTOR CURRENT IC [A] 2 COLLECTOR-EMITTER VOLTAGE VCE [V] COLLECTOR-EMITTER VOLTAGE VCE [V] & 80 40 Tc = 25 & 125 & 80 40 0 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCE [V] 5 0 4 8 12 16 GATE-EMITTER VOLTAGE VGE [V] 20 Preliminary SM2G50US60 IGBT MODULE 16 16 Common Emitter Tc = 25 Common Emitter Tc = 125 & COLLECTOR-EMITTER VOLTAGE V CE [V] COLLECTOR-EMITTER VOLTAGE V CE [V] & 12 8 100 4 50 Ic = 20 A 0 12 8 100 4 50 Ic = 20 A 0 0 4 8 12 16 20 0 4 GATE-EMITTER VOLTAGE VGE [V] 1 Tc = 25 8 12 16 20 GATE-EMITTER VOLTAGE VGE [V] & Tc = 25 & 1 0.2 &/W] 0.5 IGBT Stage 0.1 Thermal Response [Zthjc] [ & Thermal Response [Zthjc] [ /W] 0.5 0.1 0.05 0.02 0.01 0.01 0.2 DIODE Stage 0.1 0.1 0.05 0.02 0.01 0.01 single pulse single pulse 1E-3 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 Rectangular Pulse Duration [sec] 0 10 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 Rectangular Pulse Duration [sec] 0 10 1 Preliminary SM2G50US60 IGBT MODULE 160 10000 Common Cathode Vge = 0V Cies Tc = 25 & 125 & CAPACITANCE C [pF] FORWARD CURRENT I F [A] 120 80 1000 Coes 40 Common Emitter Vge = 0V f = 1Mhz Tc = 25 & 100 0 0 1 2 3 4 1 FORWARD VOLTAGE VF [V] 400 10 200 8 6 4 100 0 0 50 100 150 CHARGE QG [nC] 200 + & Esw 3.0 2.5 ENERGY [mJ] 12 Vcc = 300V Rg = 13 Tc = 125 3.5 14 300 30 4.0 GATE-EMITTER VOLTAGE V GE [V] COLLECTOR-EMITTER VOLTAGE V CE [V) + & 10 COLLECTOR-EMITTER VOLTAGE VCE [V] 16 Common Emitter RL = 6 Tc =25 Cres 2.0 Eoff 1.5 Eon 1.0 2 0.5 0 0.0 0 10 20 30 40 COLLECTOR - EMITTER CURRENT IC [A] 50 Preliminary SM2G50US60 IGBT MODULE 4 5 Vcc = 300V Ic = 50A Vcc = 300V Rg = 13 Vge = 15V + Esw IC = 50A 4 3 Eon ENERGY [mJ] ENERGY [mJ] 3 2 2 Eoff 20A 1 1 5A 0 0 0 20 40 60 80 +] 20 100 40 60 100 & 120 0.5 20 COMMON EMITTER Vcc = 300V Vge = 15V Rg = 13 Common Cathode di/dt = -100A/ + ] Trr 10 Irr 5 & & : Tc = 25 : Tc = 125 2 0 10 20 30 40 FORWARD CURRENT IF [A] 50 SWITCHING TIME td(off) , tf [ PEAK REVERSE RECOVERY CURRENT Irr [A] REVERSE RECOVERY TIME Trr [x10ns] 80 CASE TEMPERATURE TC [ ] GATE - EMITTER RESISTANCE Rg [ td(off) 0.1 tf & & : Tc = 25 : Tc = 125 0.05 10 50 COLLECTOR CURRENT Ic [A] 100 Preliminary SM2G50US60 IGBT MODULE 0.1 0.9 Common Emitter Vcc = 300V Vge = 15V Rg =13 Common Emitter Vcc = 300V Vge = 15V Ic = 50A td(off) ] SWITCHING TIME td(off) , tf [ SWITCHING TIME td(on) , tr [ ] + td(on) tf 0.1 tr & & & & : Tc = 25 : Tc = 125 0.01 50 10 : Tc = 25 : Tc = 125 0.05 100 +] 10 100 GATE RESISTANCE RG [ COLLECTOR CURRENT IC (A) 300 0.5 Common Emitter Vcc = 300V Vge = 15V Ic = 50A td(on) Ic MAX. (Pulsed) 100 tr 0.1 & & COLLECTOR CURRENT IC [A] SWITCHING TIME td(on) , tr [ ] 50 Ic MAX. (Continuos) 100 30 1ms DC Operation 10 3 1 : Tc = 25 : Tc = 125 0.01 10 +] GATE RESISTANCE RG [ 100 0.3 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE [V] 1000 Preliminary SM2G50US60 200 IGBT MODULE & + Tj 125 Vge = 15V Rg = 13 150 Vcc Rg +/- 15V 100 90% 10% Vge 50 Vce 90% Ic 10% Td(off) Tf Td(on) Tr 0 0 100 200 300 400 500 600 700 COLLECTOR-EMITTER VOLTAGE VCE [V] Inductive Load Test Circuit and Waveforms * ( & &( 7-PM-AA ( * ( 1$0( 3/$7( 7$3 7(50,1$/ W 0D[ = 0RXQWLQJ+ROH 0 '3 COLLECTOR CURRENT I C [A] L Unit : mm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or support device or system whose failure to perform can be systems which, (a) are intended for surgical implant reasonably expected to cause the failure of the life support into the body, or (b) support or sustain life, or © whose device or system, or to affect its safety or effectiveness. failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. LIFE SUPPORT POLICY Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later data. 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