ISC 2N4399

Inchange Semiconductor
Product Specification
2N4398 2N4399 2N5745
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2N5301/5302/5303
・Low collector saturation voltage
・Excellent safe operating area
APPLICATIONS
・For use in power amplifier and switching
circuits applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N4398
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N4399
Open emitter
IC
-60
2N5745
-80
2N4398
-40
2N4399
Emitter-base voltage
Open base
-60
Base current
PD
Total power dissipation
Tj
Tstg
V
V
-80
Open collector
-5
2N4398/4399
-30
2N5745
-20
Collector current
IB
UNIT
-40
2N5745
VEBO
VALUE
V
A
-7.5
A
200
W
Junction temperature
200
℃
Storage temperature
-65~200
℃
VALUE
UNIT
0.875
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N4398 2N4399 2N5745
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N4398
VCEO(SUS)
Collector-emitter
sustaining voltage
2N4399
VCEsat-2
VCEsat-3
Collector-emitter
saturation voltage
Collector-emitter
saturation voltage
Collector-emitter
saturation voltage
IC=-0.2A ;IB=0
VBE-1
VBE-2
-0.75
V
-1.0
2N4398/4399
-1.0
IC=-15A ;IB=-1.5A
V
-1.5
2N5745
2N4398/4399
IC=-20A ;IB=-2A
2N5745
IC=-20A ;IB=-4A
Base-emitter
saturation voltage
VBEsat-3
-80
2N5745
VBEsat-1
IC=-30A ;IB=-6A
2N4398/4399
-2.0
V
-4.0
V
-1.6
IC=-10A; IB=-1A
V
-1.7
2N5745
2N4398/4399
-1.85
IC=-15A ;IB=-1.5A
V
2N5745
-2.0
2N4398/4399
IC=-20A ;IB=-2A
2N5745
IC=-20A ;IB=-4A
Base-emitter
on voltage
2N4398/4399
IC=-15A ; VCE=-2V
-1.7
2N5745
IC=-10A ; VCE=-2V
-1.5
Base-emitter
on voltage
2N4398/4399
IC=-30A ; VCE=-4V
-3.0
2N5745
IC=-20A ; VCE=-4V
-2.5
Base-emitter
saturation voltage
UNIT
V
IC=-10A; IB=-1A
Collector-emitter saturation voltage
Only for 2N4398 2N4399
Base-emitter
saturation voltage
MAX
-60
2N4398/4399
VCEsat-4
VBEsat-2
TYP.
-40
2N5745
VCEsat-1
MIN
-2.5
V
V
V
ICEX
Collector cut-off current
VCE= Rated VCEO; VBE(off)=-1.5V
TC=150℃
-5
-10
mA
ICEO
Collector cut-off current
VCE=Rated VCEO; IB=0
-5.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5.0
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
hFE-2
DC current gain
hFE-3
fT
2N5745
IC=-10A ; VCE=-2V
2N4398/4399
IC=-15A ; VCE=-2V
2N5745
IC=-20A ; VCE=-2V
2N4398/4399
IC=-30A ; VCE=-4V
15
DC current gain
Transition
frequency
40
60
5
2N4398/4399
4
IC=-1A ; VCE=-10V;f=1.0MHz
MHz
2
2N5745
2
Inchange Semiconductor
Product Specification
2N4398 2N4399 2N5745
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3