ISC 2N4899

Inchange Semiconductor
Product Specification
2N4898 2N4899 2N4900
Silicon PNP Power Transistors
DESCRIPTION
・・With TO-66 package
・Low collector saturation voltage
・Excellent safe operating area
・2N4900 complement to type 2N4912
APPLICATIONS
・Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N4898
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N4899
Open emitter
-60
2N4900
-80
2N4898
-40
2N4899
Emitter-base voltage
UNIT
-40
Open base
2N4900
VEBO
VALUE
-60
V
V
-80
Open collector
-5
V
IC
Collector current
-1.0
A
ICM
Collector current-peak
-4.0
A
IB
Base current
-1.0
A
PD
Total Power Dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
7.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N4898 2N4899 2N4900
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N4898
VCEO(SUS)
Collector-emitter
sustaining voltage
2N4899
MIN
TYP.
MAX
UNIT
-40
IC=-0.1A ;IB=0
V
-60
-80
2N4900
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-0.6
V
VBEsat
Collector-emitter saturation voltage
IC=-1A ;IB=-0.1A
-1.3
V
Base-emitter on voltage
IC=-1A ; VCE=-1V
-1.3
V
-0.5
mA
VBE
ICEO
Collector cut-off current
2N4898
VCE=-20V; IB=0
2N4899
VCE=-30V; IB=0
2N4900
VCE=-40V; IB=0
ICEX
Collector cut-off current
VCE=Rated VCEO; VBE(off)=1.5V
TC=150℃
-0.1
-1.0
mA
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-50mA ; VCE=-1V
40
hFE-2
DC current gain
IC=-500mA ; VCE=-1V
20
hFE-3
DC current gain
IC=-1.0A ; VCE=-1V
10
COB
Output capacitance
IE=0;VCB=-10V;f=1MHz
fT
Transition frequency
IC=-250mA;VCE=-10V
2
100
100
3.0
pF
MHz
Inchange Semiconductor
Product Specification
2N4898 2N4899 2N4900
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3