ISC 2N4909

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
2N4909
DESCRIPTION
·Low Collector Saturation Voltage: VCE(sat)= -0.75V(Max.)@ IC= -4A
·DC Current Gain: hFE= 20-80 @IC= -4A
APPLICATIONS
·Designed for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
-4
A
PC
Collector Power [email protected]=25℃
150
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
2.0
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
2N4909
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -200mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -4A; IB= -0.4A
-0.75
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -4A; IB= -0.4A
-1.5
V
VBE(on)
Base-Emitter On Voltage
IC= -4A; VCE= -4V
-1.5
V
ICEO
Collector Cutoff Current
VCE= -80V; IB= 0
-1.0
mA
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
-0.1
mA
ICEX
Collector Cutoff Current
VCE= -80V; VBE(off)= -1.5V
VCE= -80V; VBE(off)= -1.5V, TC=150℃
-0.1
-2.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1.0
mA
hFE-1
DC Current Gain
IC= -4A; VCE= -4V
20
hFE-2
DC Current Gain
IC= -10A; VCE= -4V
5
Current-Gain—Bandwidth Product
IC= -1A; VCE= -10V; ftest= 1.0MHz
4
fT
isc Website:www.iscsemi.cn
CONDITIONS
2
MIN
MAX
-80
UNIT
V
80
MHz