Inchange Semiconductor Product Specification 2N4901 2N4902 2N4903 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5067/5068/5069 ・Low collector saturation voltage APPLICATIONS ・For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N4901 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N4902 Open emitter -60 2N4903 -80 2N4901 -40 2N4902 Emitter-base voltage UNIT -40 Open base 2N4903 VEBO VALUE -60 V V -80 Open collector -5 V IC Collector current -5 A ICM Collector current-peak -10 A IB Base current -1 A PD Total power dissipation 87.5 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 2.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N4901 2N4902 2N4903 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 MIN TYP. MAX UNIT -40 IC=-0.2A ;IB=0 2N4903 V -60 -80 VCEsat-1 Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.4 V VCEsat-2 Collector-emitter saturation voltage IC=-5A ;IB=-1A -1.5 V VBE Base-emitter on voltage IC=-1A ; VCE=-2V -1.2 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -1.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ -1.0 -2.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 20 hFE-2 DC current gain IC=-5A ; VCE=-2V 7 Transition frequency IC=-1A ; VCE=-10V 4 fT 2 80 MHz Inchange Semiconductor Product Specification 2N4901 2N4902 2N4903 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3