ISC 2N5241

Inchange Semiconductor
Product Specification
2N5241
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High breakdown voltage
APPLICATIONS
・Switching regulator
・Inverters
・Solenoid and relay drivers
・Motor controls
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
400
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
5
V
5
A
125
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
165
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
1.46
℃/W
Tc=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2N5241
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.4A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.4A
2.0
V
ICBO
Collector cut-off current
VCB=400V; IE=0
TC=125℃
0.2
2.0
mA
ICEO
Collector cut-off current
VCE=400V; IB=0
5.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE
DC current gain
IC=2.5A ; VCE=5V
2
400
UNIT
15
V
35
Inchange Semiconductor
Product Specification
2N5241
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3