Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5598 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5600/5602 Open emitter 100 2N5604 120 2N5598 60 2N5600/5602 Emitter-base voltage UNIT 80 Open base 2N5604 VEBO VALUE 80 V V 100 Open collector 5 V 2 A 20 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 4.37 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5598 VCEO(SUS) Collector-emitter sustaining voltage 2N5600/5602 TYP. MAX UNIT 60 IC=50mA ;IB=0 2N5604 VCEsat MIN V 80 100 Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEO Collector cut-off current VCE= Rated VCEO,IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA 2N5598/5602 hFE fT 70 200 2N5600/5604 30 90 2N5598/5602 60 DC current gain IC=1A ; VCE=5V Transition frequency IC=0.5A ; VCE=10V 2N5600/5604 MHz 50 2 Inchange Semiconductor Product Specification 2N5598 2N5600 2N5602 2N5604 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3