ISC 2N5631

Inchange Semiconductor
Product Specification
2N5631
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2N6031
・High collector-emitter sustaining voltage
・High DC current [email protected]=8A
・Low collector saturation voltage
APPLICATIONS
・For high power audio amplifier and
high voltage switching regulator
circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
16
A
ICM
Collector current-peak
20
A
IB
Base current
5.0
A
PD
Total Power Dissipation
200
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
0.875
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N5631
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=1A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=16A ;IB=4A
2.0
V
Base-emitter saturation voltage
IC=10A; IB=1A
1.8
V
VBE
Base-emitter on voltage
IC=8A ; VCE=2V
1.5
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IE=0
2.0
mA
ICEO
Collector cut-off current
VCE=70V; IB=0
2.0
mA
ICEX
Collector cut-off current
VCE=ratedVCB ;VBE(off)=1.5V
TC=150℃
2.0
7.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5.0
mA
hFE-1
DC current gain
IC=8A ; VCE=2V
15
hFE-2
DC current gain
IC=16A ; VCE=2V
4
COB
Output capacitance
IE=0 ; VCB=10V ;f=0.1MHz
fT
Transition frequency
IC=1A ; VCE=20V ;f=0.5MHz
VBEsat
2
140
UNIT
V
60
500
1.0
pF
MHz
Inchange Semiconductor
Product Specification
2N5631
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3