Inchange Semiconductor Product Specification 2N5873 2N5874 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5873 VCBO Collector-base voltage 60 Open base 2N5874 VEBO V 80 2N5873 Collector-emitter voltage Emitter-base voltage UNIT 60 Open emitter 2N5874 VCEO VALUE V 80 Open collector 5 V 7 A 115 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5873 2N5874 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5873 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 60 IC=0.1A ;IB=0 2N5874 V 80 VCEsat Collector-emitter saturation voltage IC=5A;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V Collector cut-off current VCB=ratedVCBO; IB=0 1.0 mA 2.0 mA 1.0 mA ICBO 2N5873 ICEO VCE=30V; IB=0 Collector cut-off current 2N5874 VCE=40V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=2.5A ; VCE=4V 20 Trainsistion frequency IC=0.5A ; VCE=10V 4 fT 2 100 MHz Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5873 2N5874 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3